a p30g120bsw-h f advanced power n-channel insulated gate electronics corp. features high speed switching low saturation voltage v ce(sat) =2.9v@i c =30a co-pak, igbt with frd rohs compliant & halogen-free absolute maximum ratings , 1/8" from case for 5 seconds . notes: 1.pulse width limited by max . junction temperature . thermal data symbol rthj-c(igbt) rthj-c(diode) rthj-a electrical characteristics@t j =25 o c(unless otherwise specified) symbol min. typ. max. units i ges --+ 500 na i ces --1ma v ce(sat) - 2.7 3.4 v - 3.7 - v v ge(th) 3-7v q g - 63 100 nc q ge -12- nc q gc -32- nc t d(on) -40- ns t r -45- ns t d(off) - 125 - ns t f - 430 860 ns e on - 1.3 - mj e off - 3.1 - mj c ies - 1400 2240 pf c oes - 120 - pf c res -15- pf v f - 2.5 3.2 v t rr -70- ns q rr - 170 - nc data and specifications subject to change without notice 1 value units -55 to 150 -55 to 150 201107251 halogen-free product a 300 /w /w thermal resistance junction-case v ge =15v collector-emitter saturation voltage maximum lead temp. for soldering purposes thermal resistance junction-ambient output capacitance turn-on delay time gate-collector charge total gate charge parameter v cc =500v bipolar transistor with frd. test conditions i c =30a gate-emitter charge gate threshold voltage v ge =15v, i c =30a v ce =1200v, v ge =0v collector-emitter leakage current parameter gate-to-emitter leakage current 1200v rating collector-emitter voltage units v 1200 v a a a 5 collector current maximum power dissipation /w a 208 8 120 w 30a v ces v ce =v ge , i c =250ua v ge =+ 30v, v ce =0v 40 collector current 40 v ge =15v, i c =60a 0.6 thermal resistance junction-case p d @t c =25 t j t l operating junction temperature range t stg electrical characteristics of diode@t j =25 (unless otherwise specified) v cc =600v, i c =30a, v ge =15v, r g =5 ? , inductive load rise time turn-off delay time fall time f=1.0mhz v ge =0v reverse transfer capacitance turn-on switching loss turn-off switching loss reverse recovery charge di/dt = 100 a/s forward voltage i f =8a reverse recovery time i f =8a v ce =30v input capacitance storage temperature range + 30 30 60 i f @t c =25 i fm diode forward current diode pulse forward current i c i cm i c @t c =100 pulsed collector current 1 v ge i c @t c =25 parameter gate-emitter voltage symbol v ces g c e to-3p g c e
AP30G120BSW-HF fig 1. typical output characteristics fig 2. typical output characteristics fig 3. typical saturation voltage fig 4. typical collector- emitter voltage characteristics v.s. junction temperature fig 5. gate threshold voltage fig 6. typical capacitance characterisitics v.s. junction temperature 2 0 40 80 120 160 0 4 8 12 16 20 v ce , collector-emitter voltage (v) i c , collector current (a) 20v 18v 15v 12v v ge =10v t c =25 o c 0 20 40 60 80 100 120 0481216 v ce , collector-emitter voltage (v) i c , collector current (a) 20v 18v 15v 12v v ge =10v 1 2 3 4 5 6 0 40 80 120 160 junction temperature ( o c) v ce(sat) , saturation voltage(v) i c =60a i c =30a v ge =15v 0 0.4 0.8 1.2 1.6 2 -50 0 50 100 150 junction temperature ( o c ) normalized v ge(th) (v) t c =150 o c 0 20 40 60 80 100 120 0246810 v ce , collector-emitter voltage (v) i c , collector current(a) v ge =15v t c =25 0 400 800 1200 1600 2000 2400 1 5 9 13172125293337 v ce , collector-emitter voltage (v) capacitance (pf) f =1.0mh z c ies c oes c res t c =150 i c =1ma
a p30g120bsw-hf fig 7. soa characteristics fig 8. effective transient thermal impedance fig 9. saturation voltage vs. v ge fig 10. saturation voltage vs. v ge fig11. forward characteristic of fig 12. gate charge characterisitics diode 3 0 4 8 12 16 0 20406080 q g , gate charge (nc) v ge , gate -emitter voltage (v) i c =30a v cc =500v 0 2 4 6 8 10 048121620 v ge , gate-emitter voltage(v) v ce , collector-emitter voltage(v) i c =60a t c =25 o c 0 2 4 6 8 10 0 4 8 12 16 20 v ge , gate-emitter voltage(v) v ce , collector-emitter voltage(v) t c =150 o c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 0 0.8 1.6 2.4 3.2 v f , forward voltage (v) i f , forward current (a) t j =25 o c t j =150 o c i c =30a i c =15a i c =60a i c =30a i c =15a 0.01 0.1 1 10 100 1000 1 10 100 1000 10000 v ce ,collector - emitter voltage(v) i c ,collctor current(a) t c =25 o c single pulse 10us 100us 1ms 10ms
AP30G120BSW-HF fig 13. maximum collector current vs. case temperature 4 0 20 40 60 80 25 50 75 100 125 150 t c , case temperature ( o c) i c , maximum dc collector current (a)
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